型号:  OSD35-LR-D

功能描述:  OSI Fully Depleted Series Photodiodes The OSD-35-LR-D large active area high speed detector, from OSI Optoelectronics can be fully depleted to achieve very low junction capacitance for fast response times. Operating at a higher reverse voltage, up to the maximum allowable value, the OSD-35-LR-D can achieve even faster response times in nano-seconds. The OSD-35-LR-D photodiod

制造商:  OSI Optoelectronics

检测频谱:  极紫外（XUV）

峰值灵敏度的波长:  830nm

封装类型:  陶瓷

安装类型:  通孔安装

针数目:  2

频谱范围内的灵敏度:  350 → 1100 nm

二极管材料:  Si

检测到的最小波长:  350nm

检测到的最大波长:  1100nm

长度:  9.91mm

宽度:  8.89mm

高度:  2.03mm

极性:  向前

峰值光灵敏度:  0.54A/W