型号: PBRN123ET
功能描述: TRANSISTOR, NPN, 40V, 0.8A, SOT-23
制造商: NXP
晶体管极性: :NPN
Collector Emitter Voltage V(br)ceo: :40V
功耗: :250mW
DC Collector Current: :600mA
DC Current Gain hFE: :70
Operating Temperature Min: :-65°C
Operating Temperature Max: :150°C
Transistor Case Style: :SOT-23
No. of Pins: :3
MSL: :MSL 1 - Unlimited
SVHC: :No SVHC (20-Jun-2013)
Collector Emitter Voltage Vces: :-1.15V
连续集电极电流Ic最大: :800mA
Current Ic Continuous a Max: :800mA
Hfe Min: :350
工作温度范围: :-65°C to +150°C
Resistance R1: :2.2kohm
Resistance R2: :2.2kohm
端接类型: :SMD
晶体管类型: :General Purpose
Weight (kg): 0.00001
Tariff No.: 85412900
联系人:陈晓玲
电话:18126117392
联系人:肖瑶,树平
电话:13926529829
联系人:Alien
联系人:郑小姐
电话:18188616613
联系人:杨先生
电话:13352985419
联系人:李先生
电话:17080955875
联系人:蔡小姐
电话:18129819897
联系人:李京
电话:17727581162
联系人:林
电话:18123937529
联系人:曾香
电话:15015200707
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