型号:  PMPB08R6ENX

功能描述:  MOSFET N-CH 30V 11A DFN2020M-6

制造商:  Nexperia USA Inc.

Series:  TrenchMOS™

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  30 V

Current - Continuous Drain (Id) @ 25°C:  11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  10.5mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:  2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  20.6 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  840 pF @ 15 V

FET Feature:  -

Power Dissipation (Max):  1.9W (Ta), 12.5W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  DFN2020M-6

Package / Case:  6-UDFN Exposed Pad