型号:  R6009JND3TL1

功能描述:  MOSFET N-CH 600V 9A TO252

制造商:  Rohm Semiconductor

Series:  -

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  600 V

Current - Continuous Drain (Id) @ 25°C:  9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  15V

Rds On (Max) @ Id, Vgs:  585mOhm @ 4.5A, 15V

Vgs(th) (Max) @ Id:  7V @ 1.38mA

Gate Charge (Qg) (Max) @ Vgs:  22 nC @ 15 V

Vgs (Max):  ±30V

Input Capacitance (Ciss) (Max) @ Vds:  645 pF @ 100 V

FET Feature:  -

Power Dissipation (Max):  125W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  TO-252

Package / Case:  TO-252-3, DPak (2 Leads + Tab), SC-63