型号:  R6535KNZC8

功能描述:  MOSFET N-CH 650V 35A TO3

制造商:  Rohm Semiconductor

Series:  -

Package:  Tube

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  650 V

Current - Continuous Drain (Id) @ 25°C:  35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  115mOhm @ 18.1A, 10V

Vgs(th) (Max) @ Id:  5V @ 1.21mA

Gate Charge (Qg) (Max) @ Vgs:  72 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  3 nF @ 25 V

FET Feature:  -

Power Dissipation (Max):  102W (Tc)

Operating Temperature:  150°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  TO-3

Package / Case:  TO-3P-3 Full Pack