型号:  RF4E060AJTCR

功能描述:  MOSFET N-CH 30V 6A HUML2020L8

制造商:  Rohm Semiconductor

Series:  -

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  30 V

Current - Continuous Drain (Id) @ 25°C:  6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):  2.5V, 4.5V

Rds On (Max) @ Id, Vgs:  37mOhm @ 6A, 4.5V

Vgs(th) (Max) @ Id:  1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:  4 nC @ 4.5 V

Vgs (Max):  ±12V

Input Capacitance (Ciss) (Max) @ Vds:  450 pF @ 15 V

FET Feature:  -

Power Dissipation (Max):  2W (Ta)

Operating Temperature:  150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  HUML2020L8

Package / Case:  8-PowerUDFN