型号:  RF4L055GNTCR

功能描述:  MOSFET N-CH 60V 5.5A HUML2020L8

制造商:  Rohm Semiconductor

Series:  -

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  60 V

Current - Continuous Drain (Id) @ 25°C:  5.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):  4.5V, 10V

Rds On (Max) @ Id, Vgs:  43mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:  2.7V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:  7.8 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  400 pF @ 30 V

FET Feature:  -

Power Dissipation (Max):  2W (Ta)

Operating Temperature:  150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  HUML2020L8

Package / Case:  8-PowerUDFN