型号:  RFB18N10CS

功能描述:  MOSFET N-CH 100V 18A TO220AB-5

制造商:  Harris Corporation

Series:  -

Package:  Bulk

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  100 V

Current - Continuous Drain (Id) @ 25°C:  18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  100mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:  4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  20 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  -

FET Feature:  Current Sensing

Power Dissipation (Max):  79W (Tc)

Operating Temperature:  -55°C ~ 175°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  TO-220AB-5

Package / Case:  TO-220-5