型号:  RGT50NS65DGC9

功能描述:  IGBT

制造商:  Rohm Semiconductor

Series:  -

Package:  Tube

IGBT Type:  Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):  650 V

Current - Collector (Ic) (Max):  48 A

Current - Collector Pulsed (Icm):  75 A

Vce(on) (Max) @ Vge, Ic:  2.1V @ 15V, 25A

Power - Max:  194 W

Switching Energy:  -

Input Type:  Standard

Gate Charge:  49 nC

Td (on/off) @ 25°C:  27ns/88ns

Test Condition:  400V, 25A, 10Ohm, 15V

Reverse Recovery Time (trr):  58 ns

Operating Temperature:  -40°C ~ 175°C (TJ)

Mounting Type:  Through Hole

Package / Case:  TO-262-3 Long Leads, I²Pak, TO-262AA

Supplier Device Package:  TO-262