型号:  RJ1G12BGNTLL

功能描述:  MOSFET N-CH 40V 120A LPTL

制造商:  Rohm Semiconductor

Series:  -

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  40 V

Current - Continuous Drain (Id) @ 25°C:  120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  4.5V, 10V

Rds On (Max) @ Id, Vgs:  1.86mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:  2.5V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:  165 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  12500 pF @ 20 V

FET Feature:  -

Power Dissipation (Max):  178W (Tc)

Operating Temperature:  150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  LPTL

Package / Case:  TO-263-3, D²Pak (2 Leads + Tab), TO-263AB