型号: RM115N65T2
功能描述: MOSFET N-CH 65V 115A TO220-3
制造商: Rectron USA
Series: -
Package: Tube
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 65 V
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): +20V, -12V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
FET Feature: -
Power Dissipation (Max): 160W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
联系人:Alien
联系人:余先生,张先生
电话:13826514222
联系人:吴新
联系人:陈欣
电话:13725554160
联系人:彭先生,许娜
电话:19068068798
联系人:柯小姐
电话:13417122760
联系人:曹,林
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联系人:黄先生
电话:18122499796
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