型号: RM12N650TI
功能描述: MOSFET N-CH 650V 11.5A TO220F
制造商: Rectron USA
Series: -
Package: Tube
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
FET Feature: -
Power Dissipation (Max): 32.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
联系人:陈敏
电话:17302670049
联系人:Alien
联系人:余先生,张先生
电话:13826514222
联系人:赵小姐
电话:13049883113
联系人:蔡升航
电话:13202105858
联系人:刘经理
电话:13381567868
联系人:辜先生
电话:13528816759
联系人:肖生
电话:15813135800
联系人:欧阳
电话:13028842817
联系人:彭先生
电话:17097219357