型号:  RV8C010UNHZGG2CR

功能描述:  MOSFET N-CH 20V 1A DFN1010-3W

制造商:  Rohm Semiconductor

Series:  Automotive, AEC-Q101

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  20 V

Current - Continuous Drain (Id) @ 25°C:  1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  470mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id:  1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:  -

Vgs (Max):  ±8V

Input Capacitance (Ciss) (Max) @ Vds:  40 pF @ 10 V

FET Feature:  -

Power Dissipation (Max):  1W

Operating Temperature:  150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  DFN1010-3W

Package / Case:  3-XFDFN