型号:  SCT3120AW7TL

功能描述:  TRANS SJT N-CH 650V 21A TO263-7

制造商:  Rohm Semiconductor

Series:  -

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):  650 V

Current - Continuous Drain (Id) @ 25°C:  21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  156mOhm @ 6.7A, 18V

Vgs(th) (Max) @ Id:  5.6V @ 3.33mA

Gate Charge (Qg) (Max) @ Vgs:  38 nC @ 18 V

Vgs (Max):  +22V, -4V

Input Capacitance (Ciss) (Max) @ Vds:  460 pF @ 500 V

FET Feature:  -

Power Dissipation (Max):  100W

Operating Temperature:  175°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  TO-263-7

Package / Case:  TO-263-8, D²Pak (7 Leads + Tab), TO-263CA