型号:  SCTWA90N65G2V

功能描述:  SILICON CARBIDE POWER MOSFET 650

制造商:  STMicroelectronics

Series:  -

Package:  Tube

FET Type:  N-Channel

Technology:  SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):  650 V

Current - Continuous Drain (Id) @ 25°C:  119A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  18V

Rds On (Max) @ Id, Vgs:  24mOhm @ 50A, 18V

Vgs(th) (Max) @ Id:  5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:  157 nC @ 18 V

Vgs (Max):  +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds:  3380 pF @ 400 V

FET Feature:  -

Power Dissipation (Max):  565W (Tc)

Operating Temperature:  -55°C ~ 200°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  TO-247 Long Leads

Package / Case:  TO-247-3