型号:  SEMIX101GD066HDS

功能描述:  IGBT Half-Bridge Ultrafast, 1200V, SEMITRANS

制造商:  SEMIKRON

Channel Type:  N

Collector Current:  139 A

Collector to Emitter Shorted Voltage:  600 V

Collector to Emitter Voltage:  600 V

Configuration:  Array

Continuous Collector Current:  139 A

Dimensions:  138 x 65.3 x 17 mm

Energy Rating:  3 mJ

Gate to Emitter Voltage:  20 V

Height:  0.669" (17mm)

Length:  5.433" (138mm)

Maximum Operating Temperature:  +175 °C

Minimum Operating Temperature:  -40 °C

Mounting Type:  Screw

Number of Pins:  20

Package Type:  SEMIX 13

Polarity:  N-Channel

Primary Type:  Si

Resistance, Thermal, Junction to Case:  0.41 K/W

Series:  IGBT Series

Temperature Operating Range:  -40 to +175 °C

Transistor Type:  IGBT

Type:  Trench

Width:  2.571" (65.3mm)