型号:  SEMIX151GB12E4S

功能描述:  IGBT Half-Bridge Ultrafast, 1200V, SEMITRANS

制造商:  SEMIKRON

Channel Type:  N

Collector Current:  232 A

Collector to Emitter Shorted Voltage:  1200 V

Collector to Emitter Voltage:  1200 V

Configuration:  Dual

Continuous Collector Current:  232 A

Dimensions:  83.5 x 63.5 x 17 mm

Energy Rating:  16.6 mJ

Gate to Emitter Voltage:  20 V

Height:  0.669" (17mm)

Length:  3.287" (83.5mm)

Maximum Operating Temperature:  +175 °C

Minimum Operating Temperature:  -40 °C

Mounting Type:  Screw

Number of Pins:  12

Package Type:  SEMIX 1s

Resistance, Thermal, Junction to Case:  0.19 K/W

Series:  IGBT Series

Temperature Operating Range:  -40 to +175 °C

Type:  Trench

Width:  2.5" (63.5mm)