型号:  SEMIX503GD126HDC

功能描述:  IGBT, 1200 V, 490 A @ 25 DegC, 480 A @ 80 DegC, 1.7 V @ 25 degC

制造商:  SEMIKRON

Channel Type:  N

Collector Current:  466 A

Collector to Emitter Shorted Voltage:  1200 V

Configuration:  Array

Continuous Collector Current:  466 A

Dimensions:  149.5 x 163 x 17 mm

Energy Rating:  72 mJ

Gate Capacitance:  21.6 nF

Gate to Emitter Voltage:  20 V

Length:  5.885" (149.5mm)

Minimum Operating Temperature:  -40 °C

Mounting Type:  Screw

Number of Pins:  29

Package Type:  SEMIX 33c

Polarity:  N-Channel

Primary Type:  Si

Product Header:  Trench N-Channel IGBT Module

Resistance, Thermal, Junction to Case:  0.08 K/W

Series:  IGBT Series

Temperature Operating Range:  -40 to +150 °C

Transistor Type:  IGBT

Type:  Trench

Voltage, Collector to Emitter, Saturation:  1.7 V

Voltage, Saturation, Collector to Emitter:  1.7 V @ 25°C (Typ.)