型号:  SEMIX703GD126HDC

功能描述:  IGBT, 1200 V, 700 A @ 25 DegC, 700 A @ 80 DegC, 1.7 V @ 25 degC

制造商:  SEMIKRON

Channel Type:  N

Collector Current:  642 A

Collector to Emitter Shorted Voltage:  1200 V

Configuration:  Array

Continuous Collector Current:  642 A

Energy Rating:  100 mJ

Gate Capacitance:  32.3 nF

Height:  0.669" (17mm)

Length:  5.885" (149.5mm)

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -40 °C

Package Type:  SEMIX 33c

Polarity:  N-Channel

Primary Type:  Si

Product Header:  Trench N-Channel IGBT Module

Resistance, Thermal, Junction to Case:  0.061 K/W

Series:  IGBT Series

Temperature Operating Range:  -40 to +150 °C

Transistor Type:  IGBT

Type:  Trench

Voltage, Saturation, Collector to Emitter:  1.7 V @ 25°C (Typ.)