型号:  SI1021R-T1-GE3/BKN

功能描述:  60V (D-S) P-CH MOSFET W/ESD PROTECT

制造商:  Siliconix / Vishay

Channel Type:  P

Configuration:  Single

Dimensions:  1.68 x 0.86 x 0.8 mm

Drain Current:  -135 A

Drain to Source On Resistance:  8 Ω

Drain to Source Voltage:  -60 V

Forward Transconductance:  80 mS

Forward Voltage, Diode:  80 V

Gate to Source Voltage:  ±20 V

Height:  0.031" (0.8mm)

Input Capacitance:  23 pF @ -25 V

Length:  0.066" (1.68mm)

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -55 °C

Mounting Type:  Surface Mount

Number of Elements per Chip:  1

Number of Pins:  3

Operating and Storage Temperature:  -55 to +150 C

Package Type:  SC-75A

Polarization:  P-Channel

Power Dissipation:  250 mW

Series:  SI10 Series

Temperature Operating Range:  -55 to +150 °C

Total Gate Charge:  1.7 nC

Turn Off Delay Time:  35 ns

Turn On Delay Time:  20 ns

Typical Gate Charge @ Vgs:  1.7 nC @ -30 V

Voltage, Breakdown, Drain to Source:  -60 V

Width:  0.034" (0.86mm)