型号:  SI1022R-T1-E3/BKN

功能描述:  60V (D-S) N-CH MOSFET W/ESD PROTECT

制造商:  Siliconix / Vishay

Channel Type:  N

Configuration:  Single

Dimensions:  1.68 x 0.86 x 0.8 mm

Drain Current:  330 mA

Drain to Source On Resistance:  5 Ω

Drain to Source Voltage:  60 V

Forward Transconductance:  0.1 S

Forward Voltage, Diode:  1.3 V

Gate to Source Voltage:  ±20 V

Height:  0.031" (0.8mm)

Input Capacitance:  30 pF @ 25 V

Junction to Ambient Thermal Resistance:  500 °C/W

Length:  0.066" (1.68mm)

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -55 °C

Mounting Type:  Surface Mount

Number of Elements per Chip:  1

Number of Pins:  3

Operating and Storage Temperature:  –55 to +150 C

Package Type:  SC-75A

Polarization:  N-Channel

Power Dissipation:  250 mW

Series:  SI10 Series

Temperature Operating Range:  -55 to +150 °C

Total Gate Charge:  0.6 pC

Turn Off Delay Time:  35 ns

Turn On Delay Time:  25 ns

Typical Gate Charge @ Vgs:  Maximum of 0.6 nC @ 10 V

Voltage, Breakdown, Drain to Source:  60 V

Width:  0.034" (0.86mm)