型号: SI1026X-T1-GE3/BKN
功能描述: DUAL 60V (D-S) N-CH MOSFET W/ESD PR
制造商: Siliconix / Vishay
Channel Type: N
Configuration: Single
Dimensions: 1.7 x 1.2 x 0.5 mm
Drain Current: 305 A
Drain to Source On Resistance: 3 Ω
Drain to Source Voltage: 60 V
Forward Transconductance: 200 mS
Forward Voltage, Diode: 1.4 V
Gate to Source Voltage: ±20 V
Height: 0.02" (0.5mm)
Input Capacitance: 30 pF @ 25 V
Length: 0.066" (1.68mm)
Maximum Operating Temperature: +150 °C
Minimum Operating Temperature: -55 °C
Mounting Type: Surface Mount
Number of Elements per Chip: 2
Number of Pins: 6
Operating and Storage Temperature: –55 TO +150 C
Package Type: SC-89
Polarization: N-Channel
Power Dissipation: 250 mW
Series: SI10 Series
Temperature Operating Range: -55 to +150 °C
Total Gate Charge: 600 pC
Turn Off Delay Time: 20 ns
Turn On Delay Time: 15 ns
Typical Gate Charge @ Vgs: 600 nC @ 4.5 V
Voltage, Breakdown, Drain to Source: 60 V
Width: 0.047" (1.2mm)
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