型号:  SI1026X-T1-GE3/BKN

功能描述:  DUAL 60V (D-S) N-CH MOSFET W/ESD PR

制造商:  Siliconix / Vishay

Channel Type:  N

Configuration:  Single

Dimensions:  1.7 x 1.2 x 0.5 mm

Drain Current:  305 A

Drain to Source On Resistance:  3 Ω

Drain to Source Voltage:  60 V

Forward Transconductance:  200 mS

Forward Voltage, Diode:  1.4 V

Gate to Source Voltage:  ±20 V

Height:  0.02" (0.5mm)

Input Capacitance:  30 pF @ 25 V

Length:  0.066" (1.68mm)

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -55 °C

Mounting Type:  Surface Mount

Number of Elements per Chip:  2

Number of Pins:  6

Operating and Storage Temperature:  –55 TO +150 C

Package Type:  SC-89

Polarization:  N-Channel

Power Dissipation:  250 mW

Series:  SI10 Series

Temperature Operating Range:  -55 to +150 °C

Total Gate Charge:  600 pC

Turn Off Delay Time:  20 ns

Turn On Delay Time:  15 ns

Typical Gate Charge @ Vgs:  600 nC @ 4.5 V

Voltage, Breakdown, Drain to Source:  60 V

Width:  0.047" (1.2mm)