型号:  SI3900DV-T1-E3/BKN

功能描述:  MOSFET; TSOP6 20V Dual N-Channel (D-S) Trench

制造商:  Siliconix / Vishay

Channel Type:  N

Configuration:  Single

Dimensions:  3.1 x 1.7 x 1 mm

Drain Current:  2 A

Drain to Source On Resistance:  0.2 Ω

Drain to Source Voltage:  20 V

Forward Transconductance:  5 S

Forward Voltage, Diode:  1.1 V

Gate to Source Voltage:  ±12 V

Height:  0.039" (1mm)

Junction to Ambient Thermal Resistance:  130 °C/W

Length:  0.122" (3.1mm)

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -55 °C

Mounting Type:  Surface Mount

Number of Elements per Chip:  2

Number of Pins:  6

Operating Temperature:  -55 to 150 °C

Package Type:  TSOP

Polarization:  N-Channel

Power Dissipation:  0.83 W

Series:  SI39 Series

Temperature Operating Range:  -55 to +150 °C

Total Gate Charge:  2.1 nC

Turn Off Delay Time:  14 ns

Turn On Delay Time:  10 ns

Typical Gate Charge @ Vgs:  2.1 nC @ 4.5 V

Voltage, Breakdown, Drain to Source:  20 V

Width:  0.067" (1.7mm)