型号:  SI4936BDY-T1-E3/BKN

功能描述:  DUAL N-CHANNEL 30-V(D-S) MOSFE

制造商:  Siliconix / Vishay

Channel Type:  N

Configuration:  Dual Gate, Dual Source, Quad Drain

Dimensions:  5 x 4 x 1.55 mm

Drain Current:  6.9 A

Drain to Source On Resistance:  0.051 Ω

Drain to Source Voltage:  30 V

Forward Transconductance:  12 S

Forward Voltage, Diode:  1.2 V

Gate to Source Voltage:  ±20 V

Height:  0.061" (1.55mm)

Input Capacitance:  530 pF @ 15 V

Junction to Ambient Thermal Resistance:  58 °C/W

Length:  0.196" (5mm)

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -55 °C

Mounting Type:  Surface Mount

Number of Elements per Chip:  2

Number of Pins:  8

Operating Temperature:  -55 to 150 °C

Package Type:  SO-8

Polarization:  N-Channel

Power Dissipation:  2.8 W

Series:  SI49 Series

Temperature Operating Range:  -55 to +150 °C

Total Gate Charge:  9.1 nC

Turn Off Delay Time:  12 ns

Turn On Delay Time:  5 ns

Typical Gate Charge @ Vgs:  9.1 nC @ 10 V

Voltage, Breakdown, Drain to Source:  30 V

Width:  0.157" (4mm)