型号:  SI5435BDC-T1-E3/BKN

功能描述:  P-CHANNEL 30-V (D-S) MOSFET

制造商:  Siliconix / Vishay

Channel Type:  P

Configuration:  Hex Drain

Dimensions:  3.1 x 1.7 x 1.1 mm

Drain Current:  -3.1 A

Drain to Source On Resistance:  0.045 Ω

Drain to Source Voltage:  -30 V

Fall Time:  30 ns

Forward Transconductance:  14 S

Forward Voltage, Diode:  -1.2 V

Gate to Source Voltage:  ±20 V

Height:  0.043" (1.1mm)

Junction to Ambient Thermal Resistance:  50 °C/W

Length:  0.122" (3.1mm)

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -55 °C

Mounting Type:  Surface Mount

Number of Elements per Chip:  1

Number of Pins:  8

Operating and Storage Temperature:  -55 to +150 C

Package Type:  1206-8 ChipFET

Polarization:  P-Channel

Power Dissipation:  1.3 W

Series:  SI54 Series

Temperature Operating Range:  -55 to +150 °C

Total Gate Charge:  24 nC

Turn Off Delay Time:  50 ns

Turn On Delay Time:  15 ns

Typical Gate Charge @ Vgs:  16 nC @ -15 V

Voltage, Breakdown, Drain to Source:  -30 V

Width:  0.067" (1.7mm)