型号:  SI6933DQ-T1-E3/BKN

功能描述:  P-CHAN 30V TRENCH 32M CELL MOSFET D

制造商:  Siliconix / Vishay

Channel Type:  P

Configuration:  Dual Drain, Dual Gate, Quad

Dimensions:  4.5 x 3.1 x 1.05 mm

Drain Current:  ±3.5 A

Drain to Source On Resistance:  0.085 Ω

Drain to Source Voltage:  -30 V

Forward Transconductance:  7.2 S

Forward Voltage, Diode:  -1.2 V

Gate to Source Voltage:  ±20 V

Height:  0.041" (1.05mm)

Junction to Ambient Thermal Resistance:  125 °C/W

Length:  0.177" (4.5mm)

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -55 °C

Mounting Type:  Surface Mount

Number of Elements per Chip:  2

Number of Pins:  8

Operating Temperature:  -55 to 150 °C

Package Type:  TSSOP

Polarization:  P-Channel

Power Dissipation:  1 W

Series:  SI69 Series

Temperature Operating Range:  -55 to +150 °C

Total Gate Charge:  17 nC

Turn Off Delay Time:  33 ns

Turn On Delay Time:  13 ns

Typical Gate Charge @ Vgs:  17 nC @ -10 V

Voltage, Breakdown, Drain to Source:  -30 V

Width:  0.122" (3.1mm)