型号:  SI6954ADQ-T1-E3/BKN

功能描述:  MOSFET; 30V Dual N-Channel 2.5V Rated Trench

制造商:  Siliconix / Vishay

Channel Type:  N

Configuration:  Dual Drain, Dual Gate, Quad

Dimensions:  4.5 x 3.1 x 1.05 mm

Drain Current:  3.1 A

Drain to Source On Resistance:  0.075 Ω

Drain to Source Voltage:  30 V

Forward Transconductance:  10 S

Forward Voltage, Diode:  1.2 V

Gate to Source Voltage:  ±20 V

Height:  0.041" (1.05mm)

Junction to Ambient Thermal Resistance:  126 °C/W

Length:  0.177" (4.5mm)

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -55 °C

Mounting Type:  Surface Mount

Number of Elements per Chip:  2

Number of Pins:  8

Operating Temperature:  -55 to 150 °C

Package Type:  TSSOP

Polarization:  N-Channel

Power Dissipation:  0.83 W

Series:  SI69 Series

Temperature Operating Range:  -55 to +150 °C

Total Gate Charge:  8 nC

Turn Off Delay Time:  23 ns

Turn On Delay Time:  12 ns

Typical Gate Charge @ Vgs:  8 nC @ 10 V

Voltage, Breakdown, Drain to Source:  30 V

Width:  0.122" (3.1mm)