型号:  SI6966DQ-T1-E3/BKN

功能描述:  MOSFET; 20V; N-CH; 30MOHM; 32M CELL Trench

制造商:  Siliconix / Vishay

Channel Type:  N

Configuration:  Dual Drain, Dual Gate, Quad

Dimensions:  4.5 x 3.1 x 1.05 mm

Drain Current:  4 A

Drain to Source On Resistance:  0.04 Ω

Drain to Source Voltage:  20 V

Forward Transconductance:  20 S

Forward Voltage, Diode:  1.2 V

Gate to Source Voltage:  ±12 V

Height:  0.041" (1.05mm)

Junction to Ambient Thermal Resistance:  124 °C/W

Length:  0.177" (4.5mm)

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -55 °C

Mounting Type:  Surface Mount

Number of Elements per Chip:  2

Number of Pins:  8

Operating Temperature:  -55 to 150 °C

Package Type:  TSSOP

Polarization:  N-Channel

Power Dissipation:  0.83 W

Series:  SI69 Series

Temperature Operating Range:  -55 to +150 °C

Total Gate Charge:  11.5 nC

Turn Off Delay Time:  36 ns

Turn On Delay Time:  11 ns

Typical Gate Charge @ Vgs:  11.5 nC @ 4.5 V

Voltage, Breakdown, Drain to Source:  20 V

Width:  0.122" (3.1mm)