型号:  SI6968BEDQ-T1-E3/BKN

功能描述:  N-CH 2.5-V (G-S) MOSFET COMMONDRAIN ESD

制造商:  Siliconix / Vishay

Channel Type:  N

Configuration:  Dual Drain, Dual Gate, Quad

Dimensions:  4.5 x 3.1 x 1.05 mm

Drain Current:  5.2 A

Drain to Source On Resistance:  0.03 Ω

Drain to Source Voltage:  20 V

Forward Transconductance:  30 S

Forward Voltage, Diode:  1.2 V

Gate to Source Voltage:  ±12 V

Height:  0.041" (1.05mm)

Junction to Ambient Thermal Resistance:  100 °C/W

Length:  0.177" (4.5mm)

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -55 °C

Mounting Type:  Surface Mount

Number of Elements per Chip:  2

Number of Pins:  8

Operating Temperature:  -55 to 150 °C

Package Type:  TSSOP

Polarization:  N-Channel

Power Dissipation:  1 W

Series:  SI69 Series

Temperature Operating Range:  -55 to +150 °C

Total Gate Charge:  12 nC

Turn Off Delay Time:  860 ns

Turn On Delay Time:  245 ns

Typical Gate Charge @ Vgs:  12 nC @ 4.5 V

Voltage, Breakdown, Drain to Source:  20 V

Width:  0.122" (3.1mm)