型号:  SI7913DN-T1-E3/BKN

功能描述:  DUAL P-CHANNEL 20-V (D-S) MOSFET

制造商:  Siliconix / Vishay

Channel Type:  P

Configuration:  Dual Gate, Dual Source, Quad Drain

Dimensions:  3.15 x 3.15 x 1.07 mm

Drain Current:  -3.6 A

Drain to Source On Resistance:  0.066 Ω

Drain to Source Voltage:  -20 V

Forward Transconductance:  20 S

Forward Voltage, Diode:  -1.2 V

Gate to Source Voltage:  ±8 V

Height:  0.042" (1.07mm)

Junction to Ambient Thermal Resistance:  75 °C/W

Length:  0.124" (3.15mm)

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -55 °C

Mounting Type:  Surface Mount

Number of Elements per Chip:  2

Number of Pins:  8

Operating Temperature:  -55 to 150 °C

Package Type:  PowerPAK-SO-8

Polarization:  P-Channel

Power Dissipation:  1.3 W

Series:  SI79 Series

Temperature Operating Range:  -55 to +150 °C

Total Gate Charge:  15.3 nC

Turn Off Delay Time:  72 ns

Turn On Delay Time:  20 ns

Typical Gate Charge @ Vgs:  15.3 nC @ -4.5 V

Voltage, Breakdown, Drain to Source:  -20 V

Width:  0.124" (3.15mm)