型号:  SIA938DJT-T1-GE3

功能描述:  DUAL N-CHANNEL 20-V (D-S) MOSFET

制造商:  Vishay Siliconix

Series:  TrenchFET® Gen IV

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  2 N-Channel (Dual)

FET Feature:  Standard

Drain to Source Voltage (Vdss):  20V

Current - Continuous Drain (Id) @ 25°C:  4.5A (Ta), 4.5A (Tc)

Rds On (Max) @ Id, Vgs:  21.5mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:  1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  11.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:  425pF @ 10V

Power - Max:  1.9W (Ta), 7.8W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Package / Case:  PowerPAK® SC-70-6 Dual

Supplier Device Package:  PowerPAK® SC-70-6 Dual