型号:  SIGC109T120R3E

功能描述:  

制造商:  Infineon Technologies

封装/外壳：  --

Packing Type：  WAFER SAWN

VDS max：  1200.0V

Technology：  IGBT3

Operating Temperature min max：  -40.0 °C 150.0 °C

VGE(th) min max：  5.0 V 6.5 V

VCE(sat) max：  2.1 V

IC max：  100.0A

RoHS compliant：  yes

Packing Type：  WAFER SAWN

VDS max：  1200.0V

Technology：  IGBT3

Operating Temperature min max：  -40.0 °C 150.0 °C

VCE max：  1200.0 V

VDS max：  1200.0 V

Operating Temperature min max：  -40.0°C 150.0°C

VGE(th) min max：  5.0 V 6.5 V

VCE(sat) max：  2.1 V

VCE max：  1200.0V

VCE(sat) max：  2.1V

IC max：  100.0A

VGE(th) min max：  5.0V 6.5V

IC max：  100.0 A

RoHS compliant：  yes

Packing Type：  WAFER SAWN

VDS max：  1200.0V

Technology：  IGBT3

Operating Temperature min max：  -40.0 °C 150.0 °C

VCE max：  1200.0 V

VDS max：  1200.0 V

Operating Temperature min max：  -40.0°C 150.0°C

VGE(th) min max：  5.0 V 6.5 V

VCE(sat) max：  2.1 V

VCE max：  1200.0V

VCE(sat) max：  2.1V

IC max：  100.0A

VGE(th) min max：  5.0V 6.5V

IC max：  100.0 A

无铅情况/RoHs：  无铅/符合RoHs