型号: SIGC121T60NR2CX7SA1
功能描述: IGBT 3 CHIP 600V WAFER
制造商: Infineon Technologies
Series: -
Package: Bulk
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 150 A
Current - Collector Pulsed (Icm): 450 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 125ns/225ns
Test Condition: 300V, 150A, 1.5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
联系人:朱先生
电话:18194045272
联系人:李先生
电话:17080955875
联系人:李先生
电话:18822854608
联系人:陈欣
电话:13725554160
联系人:徐小姐
电话:13631670223
联系人:李
电话:13632880560
联系人:曾小姐
电话:18025356461
联系人:彭威豪
电话:13530088610
联系人:韩先生
电话:13510177670
联系人:赖广文
电话:13381900109