型号:  SIGC25T60UNX1SA2

功能描述:  IGBT 3 CHIP 600V WAFER

制造商:  Infineon Technologies

Series:  -

Package:  Bulk

IGBT Type:  NPT

Voltage - Collector Emitter Breakdown (Max):  600 V

Current - Collector (Ic) (Max):  30 A

Current - Collector Pulsed (Icm):  90 A

Vce(on) (Max) @ Vge, Ic:  3.15V @ 15V, 30A

Power - Max:  -

Switching Energy:  -

Input Type:  Standard

Gate Charge:  -

Td (on/off) @ 25°C:  16ns/122ns

Test Condition:  400V, 30A, 1.8Ohm, 15V

Reverse Recovery Time (trr):  -

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Package / Case:  Die

Supplier Device Package:  Die