型号:  SIHG21N80AEF-GE3

功能描述:  E SERIES POWER MOSFET WITH FAST

制造商:  Vishay Siliconix

Series:  EF

Package:  Bulk

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  800 V

Current - Continuous Drain (Id) @ 25°C:  16.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  250mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:  4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  71 nC @ 10 V

Vgs (Max):  ±30V

Input Capacitance (Ciss) (Max) @ Vds:  1511 pF @ 100 V

FET Feature:  -

Power Dissipation (Max):  179W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  TO-247AC

Package / Case:  TO-247-3