型号:  SIR510DP-T1-RE3

功能描述:  N-CHANNEL 100 V (D-S) MOSFET POW

制造商:  Vishay Siliconix

Series:  TrenchFET® Gen V

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  100 V

Current - Continuous Drain (Id) @ 25°C:  31A (Ta), 126A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  7.5V, 10V

Rds On (Max) @ Id, Vgs:  3.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:  4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  81 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  4980 pF @ 50 V

FET Feature:  -

Power Dissipation (Max):  6.25W (Ta), 104W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  PowerPAK® SO-8

Package / Case:  PowerPAK® SO-8