型号: SIR826LDP-T1-RE3
功能描述: MOSFET N-CH 80V 21.3A/86A PPAK
制造商: Vishay Siliconix
Series: TrenchFET® Gen IV
Package: Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 21.3A (Ta), 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
FET Feature: -
Power Dissipation (Max): 5W (Ta), 83W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
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