型号:  SISS80DN-T1-GE3

功能描述:  MOSFET N-CH 20V 58.3A/210A PPAK

制造商:  Vishay Siliconix

Series:  TrenchFET® Gen IV

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  20 V

Current - Continuous Drain (Id) @ 25°C:  58.3A (Ta), 210A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  2.5V, 10V

Rds On (Max) @ Id, Vgs:  0.92mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:  1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  122 nC @ 10 V

Vgs (Max):  +12V, -8V

Input Capacitance (Ciss) (Max) @ Vds:  6450 pF @ 10 V

FET Feature:  -

Power Dissipation (Max):  5W (Ta), 65W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  PowerPAK® 1212-8S

Package / Case:  PowerPAK® 1212-8S