型号:  SK 200 GD 066 T

功能描述:  IGBT Half-Bridge Ultrafast, 1200V, SEMITRANS

制造商:  SEMIKRON

Channel Type:  N

Collector Current:  174 A

Collector to Emitter Shorted Voltage:  600 V

Collector to Emitter Voltage:  600 V

Configuration:  Array

Continuous Collector Current:  174 A

Dimensions:  55 x 60.25 x 12 mm

Energy Rating:  25.9 mJ

Gate Capacitance:  12.2 nF

Gate to Emitter Voltage:  ±20 V

Height:  0.472" (12mm)

Maximum Operating Temperature:  +175 °C

Mounting Type:  Through Hole

Number of Pins:  22

Package Type:  GD-T

Polarity:  N-Channel

Primary Type:  Si

Product Header:  N-Channel IGBT Module

Series:  IGBT Series

Temperature Operating Range:  -40 to +175 °C

Transistor Type:  IGBT

Type:  Trench

Width:  2.372" (60.25mm)