型号: SK 50 GD 066 ET
功能描述: IGBT Half-Bridge Ultrafast, 1200V, SEMITRANS
制造商: SEMIKRON
Collector Current: 60 A
Collector to Emitter Shorted Voltage: 600 V
Collector to Emitter Voltage: 600 V
Configuration: Array
Dimensions: 55 x 31 x 12 mm
Energy Rating: 3.1 mJ
Gate Capacitance: 3.1 nF
Gate to Emitter Voltage: ±20 V
Height: 0.472" (12mm)
Length: 2.165" (55mm)
Maximum Operating Temperature: +175 °C
Minimum Operating Temperature: -40 °C
Mounting Type: Through Hole
Number of Pins: 19
Package Type: T-52
Polarity: N-Channel
Primary Type: Si
Product Header: N-Channel IGBT Module
Series: IGBT Series
Temperature Operating Range: -40 to +175 °C
Transistor Type: IGBT
Type: Trench
Width: 1.22" (31mm)
联系人:Alien
联系人:李先生
电话:17080955875
联系人:余先生,张先生
电话:13826514222
联系人:樊勉
电话:17621743344
联系人:赵小姐
电话:13631261606
联系人:刘经理
电话:13381567868
联系人:唐伟,吕年英
电话:13510558532
联系人:林中明
联系人:刘
电话:13538032746
联系人:黄平
电话:13430471756