型号:  SK 50 GD 066 ET

功能描述:  IGBT Half-Bridge Ultrafast, 1200V, SEMITRANS

制造商:  SEMIKRON

Collector Current:  60 A

Collector to Emitter Shorted Voltage:  600 V

Collector to Emitter Voltage:  600 V

Configuration:  Array

Dimensions:  55 x 31 x 12 mm

Energy Rating:  3.1 mJ

Gate Capacitance:  3.1 nF

Gate to Emitter Voltage:  ±20 V

Height:  0.472" (12mm)

Length:  2.165" (55mm)

Maximum Operating Temperature:  +175 °C

Minimum Operating Temperature:  -40 °C

Mounting Type:  Through Hole

Number of Pins:  19

Package Type:  T-52

Polarity:  N-Channel

Primary Type:  Si

Product Header:  N-Channel IGBT Module

Series:  IGBT Series

Temperature Operating Range:  -40 to +175 °C

Transistor Type:  IGBT

Type:  Trench

Width:  1.22" (31mm)