型号:  SKM400GAL125D

功能描述:  IGBT, Ultra Fast, IGBT, 1200 V, 400 A @ degC, 20 V, 390 A @ 25 degC, -40

制造商:  SEMIKRON

Channel Type:  N

Collector Current:  400 A

Collector to Emitter Shorted Voltage:  1200 V

Collector to Emitter Voltage:  1200 V

Configuration:  Single

Continuous Collector Current:  400 A

Dimensions:  106.4 x 61.4 x 30.5 mm

Energy Rating:  35 mJ

Gate Capacitance:  22 nF

Gate to Emitter Voltage:  ±20 V

Height:  1.201" (30.5mm)

Input Capacitance:  22 nF (Typ.)

Length:  4.188" (106.4mm)

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -40 °C

Mounting Type:  Screw

Number of Pins:  7

Package Type:  D 56

Polarity:  N-Channel

Primary Type:  Si

Product Header:  Ultrafast N-Channel IGBT Module

Resistance, Thermal, Junction to Case:  0.05 K/W

Series:  IGBT Series

Temperature Operating Range:  -40 to +150 °C

Transistor Type:  IGBT

Turn Off Time:  500 ns

Turn On Time:  70 ns

Type:  Ultrafast

Width:  2.417" (61.4mm)