型号:  SKM600GB126D

功能描述:  IGBT, 1200 V VCE, 660 A @ DegC, 20 V, 490 A

制造商:  SEMIKRON

Channel Type:  N

Collector Current:  660 A

Collector to Emitter Resistance:  1.8 Milliohms (Typ.)

Collector to Emitter Shorted Voltage:  1200 V

Collector to Emitter Voltage:  1200 V

Configuration:  Dual

Continuous Collector Current:  660 A

Dimensions:  106.4 x 61.4 x 30.5 mm

Energy Rating:  103 mJ

Gate Capacitance:  32 nF

Gate to Emitter Voltage:  ±20 V

Height:  1.201" (30.5mm)

Input Capacitance:  32 nF (Typ.)

Length:  4.188" (106.4mm)

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -40 °C

Mounting Type:  Screw

Number of Pins:  7

Package Type:  D 56

Polarity:  N-Channel

Primary Type:  Si

Product Header:  Trench N-Channel IGBT Module

Resistance, Thermal, Junction to Case:  0.055 K/W

Series:  IGBT Series

Temperature Operating Range:  -40 to +150 °C

Transistor Type:  IGBT

Turn Off Time:  670 ns (Typ.)

Turn On Time:  290 ns (Typ.)

Type:  Trench

Width:  2.417" (61.4mm)