型号:  STD10N60M6

功能描述:  MOSFET N-CH 600V 6.4A DPAK

制造商:  STMicroelectronics

Series:  MDmesh™ M6

Package:  Tape & Reel (TR)

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  600 V

Current - Continuous Drain (Id) @ 25°C:  6.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  600mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id:  4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  8.8 nC @ 10 V

Vgs (Max):  ±25V

Input Capacitance (Ciss) (Max) @ Vds:  338 pF @ 100 V

FET Feature:  -

Power Dissipation (Max):  60W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  DPAK

Package / Case:  TO-252-3, DPak (2 Leads + Tab), SC-63