型号:  STGW50H65DFB2-4

功能描述:  TRENCH GATE FIELD-STOP, 650 V, 5

制造商:  STMicroelectronics

Series:  HB2

Package:  Tube

IGBT Type:  Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):  650 V

Current - Collector (Ic) (Max):  86 A

Current - Collector Pulsed (Icm):  150 A

Vce(on) (Max) @ Vge, Ic:  2V @ 15V, 50A

Power - Max:  272 W

Switching Energy:  629µJ (on), 478µJ (off)

Input Type:  Standard

Gate Charge:  151 nC

Td (on/off) @ 25°C:  18ns/128ns

Test Condition:  400V, 50A, 12Ohm, 15V

Reverse Recovery Time (trr):  92 ns

Operating Temperature:  -55°C ~ 175°C (TJ)

Mounting Type:  Through Hole

Package / Case:  TO-247-4

Supplier Device Package:  TO-247-4