型号:  STT2200N16P55

功能描述:  

制造商:  Infineon Technologies

封装/外壳:  BG-PS55-1

Packing Type:  TRAY

Moisture Level:  NA

Configuration:  SCR / SCR Phase Control; SCR / SCR Phase Control

VDRM / VRRM [V]:  1600.0 ; 1600.0

IFSM / ITSM [A] (@10ms, Tvj max):  17500.0 ; 17500.0

VDRM/ VRRM (V):  1600.0 V; 1600.0 V

Qualification:  Industrial

Housing:  length 134 mm, width 55 mm, height 100 mm

RthJC [K/W] (@180° el sin) max:  0.056

Dimensions (length):  134.0 mm

IFSM / ITSM:  17500.0 A

Tvj [°C] max:  155.0

Dimensions (width):  55.0 mm

∫I2dt [A²s · 103] (@10ms, Tvj max):  1531.25 ; 1531.25

Voltage Class:  1600.0 V

Additional Information:  Electrical; Thermal

(diT/dt)cr [A/µs] (@DIN IEC 747- 6):  250.0

Language:  Excel

Encryption:  no

Contact Technology:  Pressure Contact

RthJA (21s) [W/K ] max:  0.084

Product Category:  Power Thyristor & Diode

ITSM [A] (@10ms, Tvj max):  17500.0

VT0 [V] (@Tvj max) max:  0.9 ; 0.9

VT0 [V] (@Tvj max):  0.9

rT [mΩ] (@Tvj max):  0.24

VT [V/kA]:  1,38

Ioverload (21s) [A]:  2180.0

rT [mΩ] (@Tvj max) max:  0.24 ; 0.24

Surge Current:  21000.0 A

Dimensions (height):  100.0 mm

无铅情况/RoHs:  无铅/符合RoHs