型号:  STW68N65DM6-4AG

功能描述:  MOSFET N-CH 650V 72A TO247-4

制造商:  STMicroelectronics

Series:  Automotive, AEC-Q101, MDmesh™

Package:  Tube

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  650 V

Current - Continuous Drain (Id) @ 25°C:  72A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  39mOhm @ 36A, 10V

Vgs(th) (Max) @ Id:  4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  118 nC @ 10 V

Vgs (Max):  ±25V

Input Capacitance (Ciss) (Max) @ Vds:  5900 pF @ 100 V

FET Feature:  -

Power Dissipation (Max):  480W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  TO-247-4

Package / Case:  TO-247-4