型号:  SUD40N02-08-E3/BKN

功能描述:  MOSFET; N-Channel 20V 14MOHM@2.5VGS PWMOptimized

制造商:  Siliconix / Vishay

Channel Type:  N

Configuration:  Single

Dimensions:  6.73 x 6.22 x 2.38 mm

Drain Current:  40 A

Drain to Source On Resistance:  0.014 Ω

Drain to Source Voltage:  20 V

Fall Time:  35 ns

Forward Transconductance:  20 S

Forward Voltage, Diode:  1.5 V

Gate to Source Voltage:  ±12 V

Height:  0.094" (2.38mm)

Input Capacitance:  2660 pF @ 20 V

Junction to Ambient Thermal Resistance:  18 °C/W

Length:  0.264" (6.73mm)

Maximum Operating Temperature:  +175 °C

Minimum Operating Temperature:  -55 °C

Mounting Type:  Surface Mount

Number of Elements per Chip:  1

Number of Pins:  3

Operating and Storage Temperature:  –55 to +175 C

Package Type:  TO-252

Polarization:  N-Channel

Power Dissipation:  71 W

Resistance, Thermal, Junction to Case:  2.1 °C/W

Series:  SUD Series

Temperature Operating Range:  -55 to +175 °C

Total Gate Charge:  35 nC

Turn Off Delay Time:  45 ns

Turn On Delay Time:  20 ns

Typical Gate Charge @ Vgs:  26 nC @ 4.5 V

Voltage, Breakdown, Drain to Source:  20 V

Width:  0.245" (6.22mm)