型号:  T1190N12TOF VT

功能描述:  

制造商:  Infineon Technologies

封装/外壳:  BG-T7526K-1

封装:  Tray

RoHS compliant:  yes

Packing Type:  TRAY

Moisture Level:  NA

Configuration:  Electrical Triggered Phase Control Thyristor

VDRM / VRRM [V]:  1200.0

VDRM/ VRRM (V):  1200.0V

Housing:  Disc dia 75mm height 26mm / Ceramic

ITAVM/TC [A/°C] (@180° el sin):  1190/85

rT [mΩ] (@Tvj max) max:  0.19

Tvj [°C] max:  125.0

ITSM:  22500.0A

VT0 [V] (@Tvj max) max:  0.9

∫I2dt [A²s · 103] (@10ms, Tvj max):  2530.0

RthJC [K/kW] (@180° el sin) max:  23.0

RthJC [K/kW] (@180° el sin) max:  23.0

rT [mΩ] (@Tvj max) max:  0.19

Clamping force [kn] min max:  16.0 32.0

ITAVM:  1190 (180 ° el sin)

ITAVM/TC [A/°C] (@180° el sin):  1190/85

Tvj [°C] max:  125.0

VT/IT [V/kA] (@Tvj max):  2.05/5.4

VT0 [V] (@Tvj max) max:  0.9

∫I2dt [A²s · 103] (@10ms, Tvj max):  2530.0

ITSM [A] (@10ms, Tvj max):  22500.0

VT/IT [V/kA] (@Tvj max):  2.05/5.4

Clamping force [kn] min max:  16.0 32.0

tq [µs]:  240.0

ITSM [A] (@10ms, Tvj max):  22500.0

无铅情况/RoHs:  无铅/符合RoHs