型号:  T1851N65TOH PR

功能描述:  

制造商:  Infineon Technologies

封装/外壳：  BG-T12026K-1

Packing Type：  TRAY

Moisture Level：  NA

Configuration：  Electrical Triggered Phase Control Thyristor

VDRM / VRRM [V]：  6500.0

VDRM/ VRRM (V)：  6500.0V

Housing：  Disc dia 120mm height 26mm / Ceramic

ITAVM/TC [A/°C] (@180° el sin)：  1830/85

rT [mΩ] (@Tvj max) max：  0.49

Tvj [°C] max：  125.0

ITSM：  48000.0A

VT0 [V] (@Tvj max) max：  1.22

∫I2dt [A²s · 103] (@10ms, Tvj max)：  11500.0

RthJC [K/kW] (@180° el sin) max：  6.5

Clamping force [kn] min max：  45.0 65.0

ITAVM：  1830 (180 ° el sin)

VT/IT [V/kA] (@Tvj max)：  2.65/3.0

ITSM [A] (@10ms, Tvj max)：  48000.0

tq [µs]：  600.0

无铅情况/RoHs：  无铅/符合RoHs