型号:  T1960N22TOF VT

功能描述:  

制造商:  Infineon Technologies

封装/外壳：  BG-T11035-1

Packing Type：  TRAY

Moisture Level：  NA

Configuration：  Electrical Triggered Phase Control Thyristor

VDRM / VRRM [V]：  2200.0

VDRM/ VRRM (V)：  2200.0 V

Housing：  Disc dia 100mm height 26mm / Ceramic

ITAVM/TC [A/°C] (@180° el sin)：  1960/85

rT [mΩ] (@Tvj max) max：  0.15

Tvj [°C] max：  125.0

ITSM：  35000.0 A

VT0 [V] (@Tvj max) max：  0.9

∫I2dt [A²s · 103] (@10ms, Tvj max)：  6125.0

RthJC [K/kW] (@180° el sin) max：  12.5

Clamping force [kn] min max：  30.0 65.0

ITAVM：  1960 (180 ° el sin)

VT/IT [V/kA] (@Tvj max)：  2.20/8.0

ITSM [A] (@10ms, Tvj max)：  35000.0

tq [µs]：  300.0

无铅情况/RoHs：  无铅/符合RoHs